AP10G06S datasheet, аналоги, основные параметры

Наименование производителя: AP10G06S  📄📄 

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5(9.7) A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.2(19.8) ns

Cossⓘ - Выходная емкость: 86(97.3) pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.036(0.07) Ohm

Тип корпуса: SOP8

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Аналог (замена) для AP10G06S

- подборⓘ MOSFET транзистора по параметрам

 

AP10G06S даташит

 ..1. Size:1977K  cn apm
 ap10g06s.pdf pdf_icon

AP10G06S

AP10G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12.5A DS D R

 7.1. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G06S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G06S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R

 8.2. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G06S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP65R950, APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, AP10G03S, AP10G06NF, 5N65, AP10H04DF, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, APG40N10D, APG40N10DF, APG40N10NF