AP10G06S Datasheet. Specs and Replacement

Type Designator: AP10G06S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5(9.7) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2(19.8) nS

Cossⓘ - Output Capacitance: 86(97.3) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036(0.07) Ohm

Package: SOP8

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AP10G06S datasheet

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 ap10g06s.pdf pdf_icon

AP10G06S

AP10G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12.5A DS D R ... See More ⇒

 7.1. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G06S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R ... See More ⇒

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G06S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R ... See More ⇒

 8.2. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G06S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R ... See More ⇒

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Detailed specifications: AP65R950, APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, AP10G03S, AP10G06NF, 5N65, AP10H04DF, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, APG40N10D, APG40N10DF, APG40N10NF

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