All MOSFET. AP10G06S Datasheet

 

AP10G06S Datasheet and Replacement


   Type Designator: AP10G06S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5(9.7) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.2(19.8) nS
   Cossⓘ - Output Capacitance: 86(97.3) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036(0.07) Ohm
   Package: SOP8
 

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AP10G06S Datasheet (PDF)

 ..1. Size:1977K  cn apm
 ap10g06s.pdf pdf_icon

AP10G06S

AP10G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12.5A DS DR

 7.1. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G06S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS DR

 8.1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G06S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS DR

 8.2. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G06S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

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Datasheet: AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF , IRF1010E , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF .

History: AP10TN003R | AP09N70I-H-HF | AP100P03D | AP1333GU

Keywords - AP10G06S MOSFET datasheet

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