AP10H04DF datasheet, аналоги, основные параметры

Наименование производителя: AP10H04DF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.6 ns

Cossⓘ - Выходная емкость: 193 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: PDFN3X3-8L

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Аналог (замена) для AP10H04DF

- подборⓘ MOSFET транзистора по параметрам

 

AP10H04DF даташит

 ..1. Size:1628K  cn apm
 ap10h04df.pdf pdf_icon

AP10H04DF

AP10H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP10H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =12.5A DS D R

 8.1. Size:1882K  cn apm
 ap10h03df.pdf pdf_icon

AP10H04DF

AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features

 8.2. Size:1932K  cn apm
 ap10h03s.pdf pdf_icon

AP10H04DF

AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R

 9.1. Size:1583K  cn apm
 ap10h10s.pdf pdf_icon

AP10H04DF

AP10H10S 100V N+N-Channel Enhancement Mode MOSFET Description The AP10H10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, AP10G03S, AP10G06NF, AP10G06S, 20N50, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, APG40N10D, APG40N10DF, APG40N10NF, APG40N10S