AP10H04DF MOSFET Datasheet: N-Ch, 40V, 12.5A. Full specification with pinout and replacement list

AP10H04DF Specs and Replacement

   Type Designator: AP10H04DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PDFN3X3-8L

AP10H04DF substitution

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AP10H04DF datasheet

..1. Size:1628K cn apm
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AP10H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP10H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =12.5A DS D R ... See More ⇒

8.1. Size:1882K cn apm
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AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features ... See More ⇒

8.2. Size:1932K cn apm
ap10h03s.pdf pdf_icon

AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R ... See More ⇒

9.1. Size:1583K cn apm
ap10h10s.pdf pdf_icon

AP10H10S 100V N+N-Channel Enhancement Mode MOSFET Description The AP10H10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R ... See More ⇒

Detailed specifications: APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF , AP10G06S , 5N65 , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF , APG40N10S .