APG40N10D datasheet, аналоги, основные параметры

Наименование производителя: APG40N10D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 71 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.8 ns

Cossⓘ - Выходная емкость: 185.4 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: TO252

  📄📄 Копировать 

Аналог (замена) для APG40N10D

- подборⓘ MOSFET транзистора по параметрам

 

APG40N10D даташит

 ..1. Size:2103K  cn apm
 apg40n10d.pdf pdf_icon

APG40N10D

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R

 0.1. Size:1220K  cn apm
 apg40n10df.pdf pdf_icon

APG40N10D

APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R

 6.1. Size:1516K  cn apm
 apg40n10nf.pdf pdf_icon

APG40N10D

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

 6.2. Size:2634K  cn apm
 apg40n10s.pdf pdf_icon

APG40N10D

APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP10G03S, AP10G06NF, AP10G06S, AP10H04DF, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, 4435, APG40N10DF, APG40N10NF, APG40N10S, APG60N10D, APG60N10NF, APG130N06P, APG130N06T, APG130N06F