APG40N10D Datasheet and Replacement. Cross Reference Search

APG40N10D Datasheet (PDF)

..1. Size:2103K cn apm
apg40n10d.pdf pdf_icon

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

0.1. Size:1220K cn apm
apg40n10df.pdf pdf_icon

APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

6.1. Size:1516K cn apm
apg40n10nf.pdf pdf_icon

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

6.2. Size:2634K cn apm
apg40n10s.pdf pdf_icon

APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

Datasheet: AP10G03S , AP10G06NF , AP10G06S , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , 5N65 , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F .