APG40N10D MOSFET Datasheet: N-Ch, 100V, 40A. Full specification with pinout and replacement list

APG40N10D Specs and Replacement

   Type Designator: APG40N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 185.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

APG40N10D substitution

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APG40N10D datasheet

..1. Size:2103K cn apm
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APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

0.1. Size:1220K cn apm
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APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

6.1. Size:1516K cn apm
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APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

6.2. Size:2634K cn apm
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APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

Detailed specifications: AP10G03S , AP10G06NF , AP10G06S , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , CS150N03A8 , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F .