APG40N10D Datasheet. Specs and Replacement

Type Designator: APG40N10D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 185.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

  📄📄 Copy 

APG40N10D substitution

- MOSFET ⓘ Cross-Reference Search

 

APG40N10D datasheet

 ..1. Size:2103K  cn apm
 apg40n10d.pdf pdf_icon

APG40N10D

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

 0.1. Size:1220K  cn apm
 apg40n10df.pdf pdf_icon

APG40N10D

APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

 6.1. Size:1516K  cn apm
 apg40n10nf.pdf pdf_icon

APG40N10D

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

 6.2. Size:2634K  cn apm
 apg40n10s.pdf pdf_icon

APG40N10D

APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

SHOW MORE

Detailed specifications: AP10G03S, AP10G06NF, AP10G06S, AP10H04DF, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, 4435, APG40N10DF, APG40N10NF, APG40N10S, APG60N10D, APG60N10NF, APG130N06P, APG130N06T, APG130N06F

Keywords - APG40N10D MOSFET specs

 APG40N10D cross reference

 APG40N10D equivalent finder

 APG40N10D pdf lookup

 APG40N10D substitution

 APG40N10D replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.