Аналоги AP120N06T. Основные параметры
Наименование производителя: AP120N06T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 172
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 125
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 89
ns
Cossⓘ - Выходная емкость: 521
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056
Ohm
Тип корпуса:
TO263
Аналог (замена) для AP120N06T
-
подбор ⓘ MOSFET транзистора по параметрам
AP120N06T даташит
..1. Size:1371K cn apm
ap120n06p ap120n06t.pdf 
AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 65V I =125A DS D R
7.4. Size:1486K cn apm
ap120n04d.pdf 
AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R
7.5. Size:1444K cn apm
ap120n03nf.pdf 
AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R
7.6. Size:1146K cn apm
ap120n02d.pdf 
AP120N02D 20V N-Channel Enhancement Mode MOSFET Description The AP120N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =120A DS D R
7.7. Size:1517K cn apm
ap120n08nf.pdf 
AP120N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP120N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R
7.8. Size:2391K cn apm
ap120n08p ap120n08t.pdf 
AP120N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP120N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R
7.9. Size:1322K cn apm
ap120n04p ap120n04t.pdf 
AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R
7.10. Size:1481K cn apm
ap120n03d.pdf 
AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R
Другие MOSFET... AP10N65F
, AP10N65P
, AP10P04D
, AP10P06MSI
, AP10P10D
, AP120N04P
, AP120N04T
, AP120N06P
, 2N60
, AP120N08P
, AP120N08T
, AP12N40F
, AP12N40P
, AP12N65F
, AP12N65P
, AP150N03P
, AP150N03T
.
