AP120N06T Specs and Replacement
Type Designator: AP120N06T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 172 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 89 nS
Cossⓘ -
Output Capacitance: 521 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
AP120N06T datasheet
..1. Size:1371K cn apm
ap120n06p ap120n06t.pdf 
AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 65V I =125A DS D R ... See More ⇒
7.4. Size:1486K cn apm
ap120n04d.pdf
AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
7.5. Size:1444K cn apm
ap120n03nf.pdf
AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
7.6. Size:1146K cn apm
ap120n02d.pdf
AP120N02D 20V N-Channel Enhancement Mode MOSFET Description The AP120N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =120A DS D R ... See More ⇒
7.7. Size:1517K cn apm
ap120n08nf.pdf
AP120N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP120N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R ... See More ⇒
7.8. Size:2391K cn apm
ap120n08p ap120n08t.pdf
AP120N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP120N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R ... See More ⇒
7.9. Size:1322K cn apm
ap120n04p ap120n04t.pdf
AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
7.10. Size:1481K cn apm
ap120n03d.pdf
AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
Detailed specifications: AP10N65F
, AP10N65P
, AP10P04D
, AP10P06MSI
, AP10P10D
, AP120N04P
, AP120N04T
, AP120N06P
, 2N60
, AP120N08P
, AP120N08T
, AP12N40F
, AP12N40P
, AP12N65F
, AP12N65P
, AP150N03P
, AP150N03T
.
History: AP12N40F
| AP120N08P
| AP3400AI
| UF830Z
| AP150N10T
| AP3407AI
Keywords - AP120N06T MOSFET specs
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