AP12N65P - аналоги и даташиты транзистора

 

AP12N65P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP12N65P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 32.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 46 nC
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 147 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.72 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP12N65P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP12N65P Datasheet (PDF)

 ..1. Size:1505K  cn apm
 ap12n65f ap12n65p.pdf pdf_icon

AP12N65P

AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.1. Size:2006K  cn apm
 ap12n40f ap12n40p.pdf pdf_icon

AP12N65P

AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.2. Size:1654K  cn apm
 ap12n06s.pdf pdf_icon

AP12N65P

AP12N06S 60V N-Channel Enhancement Mode MOSFET Description The AP12N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12A DS DR

 9.3. Size:1508K  cn apm
 ap12n10y.pdf pdf_icon

AP12N65P

AP12N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP12N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP120N04T , AP120N06P , AP120N06T , AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , IRF1405 , AP150N03P , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T .

 

 
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