AP150N03T - аналоги, даташиты, параметры транзистора

AP150N03T Datasheet (PDF)

..1. Size:910K cn apm
ap150n03p ap150n03t.pdf pdf_icon

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

6.1. Size:838K cn apm
ap150n03d.pdf pdf_icon

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

6.2. Size:1263K cn apm
ap150n03nf.pdf pdf_icon

AP150N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP150N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150A DS DR

7.1. Size:1281K cn apm
ap150n04d.pdf pdf_icon

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

Другие MOSFET... AP120N06T , AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , IRF830 , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T .