AP150N03T Datasheet. Specs and Replacement

Type Designator: AP150N03T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

  📄📄 Copy 

AP150N03T substitution

- MOSFET ⓘ Cross-Reference Search

 

AP150N03T datasheet

 ..1. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N03T

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

 6.1. Size:534K  allpower
 ap150n03q.pdf pdf_icon

AP150N03T

... See More ⇒

 6.2. Size:588K  allpower
 ap150n03g.pdf pdf_icon

AP150N03T

... See More ⇒

 6.3. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N03T

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒

SHOW MORE

Detailed specifications: AP120N06T, AP120N08P, AP120N08T, AP12N40F, AP12N40P, AP12N65F, AP12N65P, AP150N03P, 7N60, AP150N10P, AP150N10T, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T

Keywords - AP150N03T MOSFET specs

 AP150N03T cross reference

 AP150N03T equivalent finder

 AP150N03T pdf lookup

 AP150N03T substitution

 AP150N03T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility