AP50P06T - аналоги и даташиты транзистора

 

AP50P06T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50P06T
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 86.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 23.6 ns
   Cossⓘ - Выходная емкость: 224 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP50P06T

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP50P06T Datasheet (PDF)

 ..1. Size:1575K  cn apm
 ap50p06p ap50p06t.pdf pdf_icon

AP50P06T

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P06T

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

 8.2. Size:1281K  cn apm
 ap50p03d.pdf pdf_icon

AP50P06T

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 8.3. Size:1388K  cn apm
 ap50p03df.pdf pdf_icon

AP50P06T

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , 7N65 , AP5G03S , AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P .

 

 
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