All MOSFET. AP50P06T Datasheet

 

AP50P06T Datasheet and Replacement


   Type Designator: AP50P06T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
 

 AP50P06T substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP50P06T Datasheet (PDF)

 ..1. Size:1575K  cn apm
 ap50p06p ap50p06t.pdf pdf_icon

AP50P06T

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS DR

 8.1. Size:2802K  cn apm
 ap50p02df.pdf pdf_icon

AP50P06T

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

 8.2. Size:1281K  cn apm
 ap50p03d.pdf pdf_icon

AP50P06T

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS DR

 8.3. Size:1388K  cn apm
 ap50p03df.pdf pdf_icon

AP50P06T

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS DR

SHOW MORE

Datasheet: AP4N65Y , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , 7N65 , AP5G03S , AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P .

History: HM5N06R | AP60N03P

Keywords - AP50P06T MOSFET datasheet

 AP50P06T cross reference
 AP50P06T equivalent finder
 AP50P06T lookup
 AP50P06T substitution
 AP50P06T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.