AP70P03P - аналоги, параметры транзистора - Справочник транзисторов

AP70P03P даташит

..1. Size:1735K cn apm
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AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS D R

7.1. Size:1952K allpower
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7.2. Size:1663K cn apm
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AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R

7.3. Size:1611K cn apm
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AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R