AP70P03P MOSFET Datasheet: P-Ch, 30V, 78A. Full specification with pinout and replacement list

AP70P03P Specs and Replacement

Type Designator: AP70P03P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.7 nS

Cossⓘ - Output Capacitance: 310 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO220

AP70P03P substitution

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AP70P03P datasheet

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ap70p03p ap70p03t.pdf pdf_icon

AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS D R ... See More ⇒

7.1. Size:1952K allpower
ap70p03k.pdf pdf_icon

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7.2. Size:1663K cn apm
ap70p03d.pdf pdf_icon

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

7.3. Size:1611K cn apm
ap70p03nf.pdf pdf_icon

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒