AP70P03T - аналоги и даташиты транзистора

 

AP70P03T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP70P03T
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 73.7 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP70P03T

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP70P03T Datasheet (PDF)

 ..1. Size:1735K  cn apm
 ap70p03p ap70p03t.pdf pdf_icon

AP70P03T

AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS DR

 7.1. Size:1663K  cn apm
 ap70p03d.pdf pdf_icon

AP70P03T

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 7.2. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P03T

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 7.3. Size:1495K  cn apm
 ap70p03df.pdf pdf_icon

AP70P03T

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P , IRLZ44N , AP7N65D , AP7N65Y , AP7N65F , AP7N65P , AP80N07P , AP80N07T , AP80N10P , AP80N10T .

 

 
Back to Top

 


 
.