All MOSFET. AP70P03T Datasheet

 

AP70P03T Datasheet and Replacement


   Type Designator: AP70P03T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 73.7 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263
 

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AP70P03T Datasheet (PDF)

 ..1. Size:1735K  cn apm
ap70p03p ap70p03t.pdf pdf_icon

AP70P03T

AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS DR

 7.1. Size:1663K  cn apm
ap70p03d.pdf pdf_icon

AP70P03T

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 7.2. Size:1611K  cn apm
ap70p03nf.pdf pdf_icon

AP70P03T

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 7.3. Size:1495K  cn apm
ap70p03df.pdf pdf_icon

AP70P03T

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS DR

Datasheet: AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P , IRLZ44N , AP7N65D , AP7N65Y , AP7N65F , AP7N65P , AP80N07P , AP80N07T , AP80N10P , AP80N10T .

History: AP60N03F | AP60N03T | AP7N65F | AP7N65D | AP60N03P

Keywords - AP70P03T MOSFET datasheet

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