AP70P03T Datasheet. Specs and Replacement

Type Designator: AP70P03T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.7 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO263

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AP70P03T datasheet

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 ap70p03p ap70p03t.pdf pdf_icon

AP70P03T

AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS D R ... See More ⇒

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AP70P03T

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AP70P03T

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

 7.3. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P03T

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

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Detailed specifications: AP5G03DF, AP5N50F, AP5N50P, AP5N50T, AP60N03F, AP60N03T, AP60N03P, AP70P03P, 2N7000, AP7N65D, AP7N65Y, AP7N65F, AP7N65P, AP80N07P, AP80N07T, AP80N10P, AP80N10T

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