AP13P06Y datasheet, аналоги, основные параметры

Наименование производителя: AP13P06Y  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20.1 ns

Cossⓘ - Выходная емкость: 76 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm

Тип корпуса: TO251

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Аналог (замена) для AP13P06Y

- подборⓘ MOSFET транзистора по параметрам

 

AP13P06Y даташит

 ..1. Size:1763K  cn apm
 ap13p06y.pdf pdf_icon

AP13P06Y

AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 7.1. Size:1589K  cn apm
 ap13p06d.pdf pdf_icon

AP13P06Y

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 9.1. Size:62K  ape
 ap13p15gs p-hf.pdf pdf_icon

AP13P06Y

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design

 9.2. Size:100K  ape
 ap13p15gj-hf.pdf pdf_icon

AP13P06Y

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application

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