AP13P06Y MOSFET Datasheet: P-Ch, 60V, 13.5A. Full specification with pinout and replacement list

AP13P06Y Specs and Replacement

Type Designator: AP13P06Y

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.1 nS

Cossⓘ - Output Capacitance: 76 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TO251

AP13P06Y substitution

- MOSFET ⓘ Cross-Reference Search

AP13P06Y datasheet

..1. Size:1763K cn apm
ap13p06y.pdf pdf_icon

AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R ... See More ⇒

7.1. Size:1589K cn apm
ap13p06d.pdf pdf_icon

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R ... See More ⇒

9.1. Size:62K ape
ap13p15gs p-hf.pdf pdf_icon

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design... See More ⇒

9.2. Size:100K ape
ap13p15gj-hf.pdf pdf_icon

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application... See More ⇒