AP30P06D - аналоги и даташиты транзистора

 

AP30P06D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP30P06D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 52.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 23.6 ns
   Cossⓘ - Выходная емкость: 224 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP30P06D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP30P06D Datasheet (PDF)

 ..1. Size:1655K  cn apm
 ap30p06d.pdf pdf_icon

AP30P06D

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS DR

 8.1. Size:1462K  cn apm
 ap30p03df.pdf pdf_icon

AP30P06D

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS DR

 8.2. Size:858K  cn apm
 ap30p03d.pdf pdf_icon

AP30P06D

AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS DBVDSS/TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS Dm RDS(O

 8.3. Size:1643K  cn apm
 ap30p01df.pdf pdf_icon

AP30P06D

AP30P01DF -12V P-Channel Enhancement Mode MOSFET Description The AP30P01DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-30A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP120P03D , AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , 10N65 , AP30P10P , AP320N04TLG5 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI .

 

 
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