All MOSFET. AP30P06D Datasheet

 

AP30P06D Datasheet and Replacement


   Type Designator: AP30P06D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO252
 

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AP30P06D Datasheet (PDF)

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AP30P06D

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS DR

 8.1. Size:1462K  cn apm
 ap30p03df.pdf pdf_icon

AP30P06D

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS DR

 8.2. Size:858K  cn apm
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AP30P06D

AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS DBVDSS/TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS Dm RDS(O

 8.3. Size:1643K  cn apm
 ap30p01df.pdf pdf_icon

AP30P06D

AP30P01DF -12V P-Channel Enhancement Mode MOSFET Description The AP30P01DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-30A DS DR

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Datasheet: AP120P03D , AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , 10N65 , AP30P10P , AP320N04TLG5 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI .

Keywords - AP30P06D MOSFET datasheet

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