AP30P06D Datasheet. Specs and Replacement

Type Designator: AP30P06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.6 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: TO252

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AP30P06D datasheet

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AP30P06D

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R ... See More ⇒

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AP30P06D

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AP30P06D

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AP30P06D

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R ... See More ⇒

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Detailed specifications: AP120P03D, AP12N06S, AP12N10Y, AP12P04S, AP13P06D, AP13P06Y, AP13P20D, AP30P03DF, TK10A60D, AP30P10P, AP320N04TLG5, AP3400AI, AP3400BI, AP3400CI, AP3400DI, AP3400MI-L, AP3401AI

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