AP30P10P datasheet, подбор замены

 ..1. Size:1439K  cn apm
 ap30p10p.pdf 

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R

 7.1. Size:93K  ape
 ap30p10gs.pdf 

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.2. Size:94K  ape
 ap30p10gs-hf.pdf 

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 7.3. Size:151K  ape
 ap30p10gi.pdf 

AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.4. Size:185K  ape
 ap30p10gh.pdf 

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat

 7.5. Size:147K  ape
 ap30p10gp.pdf 

AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat

 7.6. Size:96K  ape
 ap30p10gh-hf.pdf 

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 7.7. Size:94K  ape
 ap30p10gp-hf.pdf 

AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 7.8. Size:1439K  cn apm
 ap30p10d.pdf 

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R