AP30P10P - описание и поиск аналогов

 

Аналоги AP30P10P. Основные параметры


   Наименование производителя: AP30P10P
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 27.4 ns
   Cossⓘ - Выходная емкость: 129 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP30P10P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP30P10P даташит

 ..1. Size:1439K  cn apm
 ap30p10p.pdf pdf_icon

AP30P10P

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R

 7.1. Size:93K  ape
 ap30p10gs.pdf pdf_icon

AP30P10P

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.2. Size:94K  ape
 ap30p10gs-hf.pdf pdf_icon

AP30P10P

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 7.3. Size:151K  ape
 ap30p10gi.pdf pdf_icon

AP30P10P

AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

ПОКАЗАТЬ ЕЩЁ

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