AP30P10P Datasheet. Specs and Replacement
Type Designator: AP30P10P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 129 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO220
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AP30P10P substitution
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AP30P10P datasheet
ap30p10p.pdf
AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R ... See More ⇒
ap30p10gs.pdf
AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
ap30p10gs-hf.pdf
AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒
ap30p10gi.pdf
AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
Detailed specifications: AP12N06S, AP12N10Y, AP12P04S, AP13P06D, AP13P06Y, AP13P20D, AP30P03DF, AP30P06D, 18N50, AP320N04TLG5, AP3400AI, AP3400BI, AP3400CI, AP3400DI, AP3400MI-L, AP3401AI, AP3401MI
Keywords - AP30P10P MOSFET specs
AP30P10P cross reference
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