AP30P10P PDF and Equivalents Search

 

AP30P10P Specs and Replacement

Type Designator: AP30P10P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.4 nS

Cossⓘ - Output Capacitance: 129 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO220

AP30P10P substitution

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AP30P10P datasheet

 ..1. Size:1439K  cn apm
ap30p10p.pdf pdf_icon

AP30P10P

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R ... See More ⇒

 7.1. Size:93K  ape
ap30p10gs.pdf pdf_icon

AP30P10P

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 7.2. Size:94K  ape
ap30p10gs-hf.pdf pdf_icon

AP30P10P

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

 7.3. Size:151K  ape
ap30p10gi.pdf pdf_icon

AP30P10P

AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

Detailed specifications: AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , RFP50N06 , AP320N04TLG5 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI .

History: AP12N65P | AP3407AI | AP3400AI | UF830Z | AP12N40F | AP120N08P | AP3400CI

Keywords - AP30P10P MOSFET specs

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