All MOSFET. AP30P10P Datasheet

 

AP30P10P Datasheet and Replacement


   Type Designator: AP30P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220
 

 AP30P10P substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP30P10P Datasheet (PDF)

 ..1. Size:1439K  cn apm
ap30p10p.pdf pdf_icon

AP30P10P

AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS DR

 7.1. Size:93K  ape
ap30p10gs.pdf pdf_icon

AP30P10P

AP30P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 7.2. Size:94K  ape
ap30p10gs-hf.pdf pdf_icon

AP30P10P

AP30P10GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 7.3. Size:151K  ape
ap30p10gi.pdf pdf_icon

AP30P10P

AP30P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

Datasheet: AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , IRF2807 , AP320N04TLG5 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI .

Keywords - AP30P10P MOSFET datasheet

 AP30P10P cross reference
 AP30P10P equivalent finder
 AP30P10P lookup
 AP30P10P substitution
 AP30P10P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.