AP3407MI - аналоги, даташиты, параметры транзистора

AP3407MI Datasheet (PDF)

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AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS DR

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AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

8.3. Size:1507K cn apm
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AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS DR

Другие MOSFET... AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI , AP3404BI , AP3407AI , MMIS60R580P , AP3409MI , AP90N06F , AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D .