AP3407MI MOSFET Datasheet: P-Ch, 30V, 4.8A. Full specification with pinout and replacement list

AP3407MI Specs and Replacement

Type Designator: AP3407MI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 70 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23

AP3407MI substitution

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AP3407MI datasheet

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AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS D R ... See More ⇒

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AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS D R ... See More ⇒

Detailed specifications: AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI , AP3404BI , AP3407AI , P60NF06 , AP3409MI , AP90N06F , AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D .