All MOSFET. AP3407MI Datasheet

 

AP3407MI Datasheet and Replacement


   Type Designator: AP3407MI
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23
 

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AP3407MI Datasheet (PDF)

 ..1. Size:1316K  cn apm
 ap3407mi.pdf pdf_icon

AP3407MI

AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS DR

 8.1. Size:2028K  allpower
 ap3407.pdf pdf_icon

AP3407MI

 8.2. Size:1473K  allpower
 ap3407s.pdf pdf_icon

AP3407MI

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

 8.3. Size:1507K  cn apm
 ap3407ai.pdf pdf_icon

AP3407MI

AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS DR

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Datasheet: AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI , AP3404BI , AP3407AI , MMIS60R580P , AP3409MI , , , , , , , .

History: 14N50

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