AP80N03D datasheet, аналоги, основные параметры

Наименование производителя: AP80N03D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 54 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.5 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO252

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Аналог (замена) для AP80N03D

- подборⓘ MOSFET транзистора по параметрам

 

AP80N03D даташит

 ..1. Size:1216K  cn apm
 ap80n03d.pdf pdf_icon

AP80N03D

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R

 0.1. Size:1838K  cn apm
 ap80n03df.pdf pdf_icon

AP80N03D

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

 7.1. Size:175K  ape
 ap80n03gp.pdf pdf_icon

AP80N03D

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low

 7.2. Size:1583K  cn apm
 ap80n03nf.pdf pdf_icon

AP80N03D

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APG120N10NF, APG120N12NF, APG130N06D, APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, 2SK2842, AP80N03DF, AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D