AP80N03D PDF and Equivalents Search

 

AP80N03D Specs and Replacement

Type Designator: AP80N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 200 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

AP80N03D substitution

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AP80N03D datasheet

 ..1. Size:1216K  cn apm
ap80n03d.pdf pdf_icon

AP80N03D

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒

 0.1. Size:1838K  cn apm
ap80n03df.pdf pdf_icon

AP80N03D

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

 7.1. Size:175K  ape
ap80n03gp.pdf pdf_icon

AP80N03D

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒

 7.2. Size:1583K  cn apm
ap80n03nf.pdf pdf_icon

AP80N03D

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

Detailed specifications: APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF , AP80N02NF , AO4468 , AP80N03DF , AP80N03NF , AP80N04D , AP80N04DF , AP80N06NF , AP80N07D , AP80N07F , AP80P04D .

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