AP80N03D Datasheet. Specs and Replacement

Type Designator: AP80N03D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

  📄📄 Copy 

AP80N03D substitution

- MOSFET ⓘ Cross-Reference Search

 

AP80N03D datasheet

 ..1. Size:1216K  cn apm
ap80n03d.pdf pdf_icon

AP80N03D

AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒

 0.1. Size:1838K  cn apm
ap80n03df.pdf pdf_icon

AP80N03D

AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

 7.1. Size:175K  ape
ap80n03gp.pdf pdf_icon

AP80N03D

AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒

 7.2. Size:1583K  cn apm
ap80n03nf.pdf pdf_icon

AP80N03D

AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒

Detailed specifications: APG120N10NF, APG120N12NF, APG130N06D, APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF, 2SK2842, AP80N03DF, AP80N03NF, AP80N04D, AP80N04DF, AP80N06NF, AP80N07D, AP80N07F, AP80P04D

Keywords - AP80N03D MOSFET specs

 AP80N03D cross reference

 AP80N03D equivalent finder

 AP80N03D pdf lookup

 AP80N03D substitution

 AP80N03D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility