AP15N10D-L - аналоги и даташиты транзистора

 

AP15N10D-L - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP15N10D-L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 20.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP15N10D-L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP15N10D-L Datasheet (PDF)

 ..1. Size:2129K  cn apm
 ap15n10d-l.pdf pdf_icon

AP15N10D-L

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS DR

 6.1. Size:1596K  cn apm
 ap15n10d.pdf pdf_icon

AP15N10D-L

AP15N10D 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =19.3A DS DR

 7.1. Size:6508K  allpower
 ap15n10.pdf pdf_icon

AP15N10D-L

AP15N10DATA SHEETDATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 7.2. Size:1038K  cn apm
 ap15n10s.pdf pdf_icon

AP15N10D-L

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP150N03NF , AP150N04D , AP150P03NF , AP15G03DF , AP15G03NF , AP15N02S , AP15N06S , AP15N10D , IRF3710 , AP15N10S , AP15N10Y , AP15N12D , AP15P04D , AP15P06D , AP2300AI , AP2300MI , AP2301BI .

 

 
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