AP65N04DF - аналоги и даташиты транзистора

 

AP65N04DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP65N04DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 192 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: PDFN3X3-8L
 

 Аналог (замена) для AP65N04DF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP65N04DF Datasheet (PDF)

 ..1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N04DF

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS DR

 8.1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N04DF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

 8.2. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N04DF

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

 8.3. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N04DF

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ATM6402NSA , ATM7414NDH , ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , AP60P03D , AP65N03DF , IRLB4132 , AP65N06NF , AP68N04DF , AP68N04NF , AP6946A , AP6G03LI , , , .

 

 
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