AGM028N08A - аналоги, даташиты, параметры транзистора

AGM028N08A Datasheet (PDF)

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AGM028N08ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 85 -- -- VGS DDSSZero Gate Voltage Drain Current V =85V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

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AGM025N08H General DescriptionProduct SummaryThe AGM025N08H combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and batteryfor loadBVDSS RDSON IDprotection applications.85V 2.3m 180A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

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AGM025N13LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 135 -- -- VGS DDSSZero Gate Voltage Drain Current V =135V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =

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AGM025N10CCharacteristics CurvesFigure 2. Maximum Power Dissipation vs CaseFigure 1. Safe Operating Area TemperatureFigure 3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature www.agm-mos.com 3 VER2.71AGM025N10CFigure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristi

Другие MOSFET... AGM015N10LL , AGM01P15AP , AGM01P15D , AGM01P15E , AGM01T08LL , AGM025N08H , AGM025N10C , AGM025N13LL , 50N06 , AGM035N10A , AGM035N10C , AGM035N10H , AGM038N10A , AGM03N85H , AGM042N10A , , .