AGM028N08A Datasheet. Specs and Replacement

Type Designator: AGM028N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.8 nS

Cossⓘ - Output Capacitance: 1240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: PDFN5X6

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AGM028N08A datasheet

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AGM028N08A

AGM028N08A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 85 -- -- V GS D DSS Zero Gate Voltage Drain Current V =85V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage ... See More ⇒

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AGM028N08A

AGM025N08H General Description Product Summary The AGM025N08H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 2.3m 180A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

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AGM028N08A

AGM025N13LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 135 -- -- V GS D DSS Zero Gate Voltage Drain Current V =135V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =... See More ⇒

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 agm025n10c.pdf pdf_icon

AGM028N08A

AGM025N10C Characteristics Curves Figure 2. Maximum Power Dissipation vs Case Figure 1. Safe Operating Area Temperature Figure 3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature www.agm-mos.com 3 VER2.71 AGM025N10C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristi... See More ⇒

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Detailed specifications: AGM015N10LL, AGM01P15AP, AGM01P15D, AGM01P15E, AGM01T08LL, AGM025N08H, AGM025N10C, AGM025N13LL, IRF540N, AGM035N10A, AGM035N10C, AGM035N10H, AGM038N10A, AGM03N85H, AGM042N10A, AGM1030MBP, AGM1030MNA

Keywords - AGM028N08A MOSFET specs

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