AGM1075S datasheet, аналоги, основные параметры

Наименование производителя: AGM1075S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.2 ns

Cossⓘ - Выходная емкость: 65 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: SOP8

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Аналог (замена) для AGM1075S

- подборⓘ MOSFET транзистора по параметрам

 

AGM1075S даташит

 ..1. Size:989K  cn agmsemi
 agm1075s.pdf pdf_icon

AGM1075S

AGM1075S General Description Product Summary The AGM1075S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 62m 10A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize

 7.1. Size:2690K  cn agmsemi
 agm1075mbp.pdf pdf_icon

AGM1075S

AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

 7.2. Size:1005K  cn agmsemi
 agm1075-g.pdf pdf_icon

AGM1075S

AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst

 7.3. Size:1116K  cn agmsemi
 agm1075d.pdf pdf_icon

AGM1075S

AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond

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