AGM1075S Datasheet. Specs and Replacement
Type Designator: AGM1075S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP8
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AGM1075S datasheet
agm1075s.pdf
AGM1075S General Description Product Summary The AGM1075S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 62m 10A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize ... See More ⇒
agm1075mbp.pdf
AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to... See More ⇒
agm1075-g.pdf
AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst... See More ⇒
agm1075d.pdf
AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond... See More ⇒
Detailed specifications: AGM042N10A, AGM1030MBP, AGM1030MNA, AGM1075D, AGM1075-G, AGM1075MBP, AGM1075MN, AGM1075MNA, IRFB4115, AGM1095MAP, AGM1095MN, AGM1099D, AGM1099E, AGM1099EY, AGM1099S, AGM10N15D, AGM042N10D
Keywords - AGM1075S MOSFET specs
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