AGM1075S MOSFET Datasheet: N-Ch, 100V, 10A. Full specification with pinout and replacement list

AGM1075S Specs and Replacement

   Type Designator: AGM1075S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP8

AGM1075S substitution

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AGM1075S datasheet

..1. Size:989K cn agmsemi
agm1075s.pdf pdf_icon

AGM1075S General Description Product Summary The AGM1075S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 62m 10A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize ... See More ⇒

7.1. Size:2690K cn agmsemi
agm1075mbp.pdf pdf_icon

AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to... See More ⇒

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agm1075-g.pdf pdf_icon

AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst... See More ⇒

7.3. Size:1116K cn agmsemi
agm1075d.pdf pdf_icon

AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond... See More ⇒