Аналоги AGM12T08A. Основные параметры
Наименование производителя: AGM12T08A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 71 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 770 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для AGM12T08A
AGM12T08A даташит
agm12t08a.pdf
AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS
agm12t08c.pdf
AGM12T08C General Description Product Summary The AGM12T08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 6.7m 78A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min
agm12t05f.pdf
AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22
agm12t05c.pdf
AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini
Другие MOSFET... AGM12N10A , AGM12N10AP , AGM12N10D , AGM12N10MNA , AGM12T02LL , AGM12T05A , AGM12T05C , AGM12T05F , STP80NF70 , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C , AGM15T06C-B , AGM15T06H .
History: BF960S | AGM065N10C
History: BF960S | AGM065N10C
Список транзисторов
Обновления
MOSFET: AOK065V65X2 | AOK065V120X2 | AOK033V120X2Q | AOK033V120X2 | AOB380A60L | AOB29S50L | AO3481C | AO3480 | APG068N04Q | APG068N04G | APG060N85D | APG054N10D | APG054N10 | APG050N85D | APG050N85 | APG046N01G
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