AGM12T08A - описание и поиск аналогов

 

Аналоги AGM12T08A. Основные параметры


   Наименование производителя: AGM12T08A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 71 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 770 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: PDFN5X6
 

 Аналог (замена) для AGM12T08A

   - подбор ⓘ MOSFET транзистора по параметрам

 

AGM12T08A даташит

 ..1. Size:1921K  cn agmsemi
agm12t08a.pdfpdf_icon

AGM12T08A

AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS

 6.1. Size:1911K  cn agmsemi
agm12t08c.pdfpdf_icon

AGM12T08A

AGM12T08C General Description Product Summary The AGM12T08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 6.7m 78A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min

 7.1. Size:1313K  cn agmsemi
agm12t05f.pdfpdf_icon

AGM12T08A

AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22

 7.2. Size:1594K  cn agmsemi
agm12t05c.pdfpdf_icon

AGM12T08A

AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini

Другие MOSFET... AGM12N10A , AGM12N10AP , AGM12N10D , AGM12N10MNA , AGM12T02LL , AGM12T05A , AGM12T05C , AGM12T05F , STP80NF70 , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C , AGM15T06C-B , AGM15T06H .

History: BF960S | AGM065N10C

 

 
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