AGM12T08A MOSFET Datasheet: N-Ch, 120V, 71A. Full specification with pinout and replacement list

AGM12T08A Specs and Replacement

   Type Designator: AGM12T08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 71 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5X6

AGM12T08A substitution

- MOSFET ⓘ Cross-Reference Search

AGM12T08A datasheet

..1. Size:1921K cn agmsemi
agm12t08a.pdf pdf_icon

AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS... See More ⇒

6.1. Size:1911K cn agmsemi
agm12t08c.pdf pdf_icon

AGM12T08C General Description Product Summary The AGM12T08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 6.7m 78A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min... See More ⇒

7.1. Size:1313K cn agmsemi
agm12t05f.pdf pdf_icon

AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22... See More ⇒

7.2. Size:1594K cn agmsemi
agm12t05c.pdf pdf_icon

AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini... See More ⇒