AGM420MAP - Даташиты. Аналоги. Основные параметры

AGM420MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM420MAP-Channel Typical CharacteristicsTypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage

AGM420MDP-Channel Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source V

AGM420MC General DescriptionProduct SummaryThe AGM420MC combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery40V 18m 7.6Aprotection applications.-40V 26m -7.5A Features Advance high cell density Trench technologySOP8 Pin ConfigurationR to

AGM420MBA General DescriptionProduct SummaryThe AGM420MBA combines advanced trenchMOSFET technology with a low resistanceBVDSS RDSON IDto provide extremely low R .package DS(ON)40V 18m 8.5Adevice isThis ideal for load switch and batteryprotection applications.-40V -6.8A40m Features Advance high cell density Trench technology SOP8 Pin ConfigurationR t