AGM425MA - Даташиты. Аналоги. Основные параметры

AGM425MATable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo

AGM425MDN-Channel Typical Characteristics4012ID=12AVGS=10V1035VGS=7V8VGS=5V306VGS=4.5V4VGS=3V2522002 4 6 8 100 0.5 1 1.5 2VDS Drain-to-Source Voltage (V) VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 1012VDS=20VID=12A886TJ=150 TJ=254420 00.00 0.25 0.50 0.75 1.00 0 4 8 12 16QG , T

AGM425ME General DescriptionProduct SummaryThe AGM425ME combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and battery40V 25m 6.6Aapplications. Features-40V 65.5m -3.3A Advance high cell density Trench technologySOT23-6L Pin Configuration

AGM425MC General DescriptionProduct SummaryThe AGM425MC combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery 40V 15m 7.6Aprotection applications.-40V 32m -6.5A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to mi

AGM425M General DescriptionProduct SummaryThe AGM425M combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal switch and batteryfor load40V 18m 6.6Aprotection applications. Features-40V 50m -5.5AAdvance high cell density Trench technologySOP8 Pin Configurattion