Справочник MOSFET. DMC3021LK4

 

DMC3021LK4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMC3021LK4
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO252 DPAK
     - подбор MOSFET транзистора по параметрам

 

DMC3021LK4 Datasheet (PDF)

 ..1. Size:387K  diodes
dmc3021lk4.pdfpdf_icon

DMC3021LK4

DMC3021LK4COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog

 6.1. Size:182K  diodes
dmc3021lsd.pdfpdf_icon

DMC3021LK4

DMC3021LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 21m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti

 6.2. Size:255K  diodes
dmc3021lsdq.pdfpdf_icon

DMC3021LK4

DMC3021LSDQCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceDevice V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully

 8.1. Size:446K  fairchild semi
fdmc3020dc.pdfpdf_icon

DMC3021LK4

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

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History: AP9685GM-HF | BRD7N65 | SSM6P16FE | HM75N75K | IRF3707SPBF | IXTM4N50 | APT6011LVR

 

 
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