DMC3021LK4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMC3021LK4
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: TO252 DPAK
Аналог (замена) для DMC3021LK4
DMC3021LK4 Datasheet (PDF)
dmc3021lk4.pdf
DMC3021LK4COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog
dmc3021lsd.pdf
DMC3021LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 21m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti
dmc3021lsdq.pdf
DMC3021LSDQCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceDevice V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully
fdmc3020dc.pdf
October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a
dmc3028lsdx.pdf
DMC3028LSDX Electrical Characteristics Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS
dmc3028lsd.pdf
A Product Line ofDiodes IncorporatedDMC3028LSD30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V45m @ VGS=
dmc3025lsd.pdf
DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max Package Low Input Capacitance TA = +25C Fast Switching Speed 20m @ VGS = 10V 8.5A N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m @ VGS = 4.5V SO-8 Halogen and Antimony Free. Gr
Другие MOSFET... ZXMP2120G4 , DMC2004DWK , DMC2004LPK , DMC2004VK , DMC2020USD , DMG1016UDW , DMG1016V , DMC3018LSD , AON6414A , DMC3021LSD , DMC3028LSD , DMC3032LSD , DMC3036LSD , DMG6602SVT , ZXMC3A16DN8 , ZXMC3A17DN8 , ZXMC3A18DN8 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918