Справочник MOSFET. ZXMC3F31DN8

 

ZXMC3F31DN8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMC3F31DN8
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

ZXMC3F31DN8 Datasheet (PDF)

 ..1. Size:326K  diodes
zxmc3f31dn8.pdfpdf_icon

ZXMC3F31DN8

ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary V(BR)DSS QG Device RDS(on) () ID (A) (V) (nC) 0.024 @ VGS= 10V 7.3 Q1 30 12.9 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 Q2 -30 12.70.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain su

 9.1. Size:686K  diodes
zxmc3a18dn8.pdfpdf_icon

ZXMC3F31DN8

ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef

 9.2. Size:731K  diodes
zxmc3amc.pdfpdf_icon

ZXMC3F31DN8

A Product Line ofDiodes IncorporatedZXMC3AMC30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

 9.3. Size:724K  diodes
zxmc3am832.pdfpdf_icon

ZXMC3F31DN8

OBSOLETE- PLEASE USE ZXMC3AMCTAZXMC3AM832MPPS Miniature Package Power SolutionsCOMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)outline this dual 30V N channel Trench MOSFET utilizes a unique stru

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CET04N10 | STD3N30T4 | H5N2004DS | DMP22M2UPS-13

 

 
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