ZXMC3F31DN8 PDF and Equivalents Search

ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary V(BR)DSS QG Device RDS(on) ( ) ID (A) (V) (nC) 0.024 @ VGS= 10V 7.3 Q1 30 12.9 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 Q2 -30 12.7 0.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain su... See More ⇒

ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V RDS(on)= 0.035 ; ID= -6.3A Description D1 D2 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes G1 G2 them ideal for high ef... See More ⇒

A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R JA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi... See More ⇒

OBSOLETE- PLEASE USE ZXMC3AMCTA ZXMC3AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique stru... See More ⇒

ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS= 30V RDS(on)= 0.050 ; ID= 5.4A P-Channel V(BR)DSS= -30V RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltag... See More ⇒

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,... See More ⇒