Справочник MOSFET. ZXMS6005DT8

 

ZXMS6005DT8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMS6005DT8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.13 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: SM8
     - подбор MOSFET транзистора по параметрам

 

ZXMS6005DT8 Datasheet (PDF)

 ..1. Size:247K  diodes
zxms6005dt8.pdfpdf_icon

ZXMS6005DT8

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 0.1. Size:348K  diodes
zxms6005dt8q.pdfpdf_icon

ZXMS6005DT8

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

 5.1. Size:242K  diodes
zxms6005dgq.pdfpdf_icon

ZXMS6005DT8

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 5.2. Size:556K  diodes
zxms6005dg.pdfpdf_icon

ZXMS6005DT8

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

Другие MOSFET... ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , 4435 , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 .

History: UPA2709GR | WSD4062DN56 | PJS6405 | AP9970GK-HF | HM7002KR | RJL5014DPP | MTM4N45

 

 
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