ZXMS6005DT8 - описание и поиск аналогов

 

ZXMS6005DT8. Аналоги и основные параметры

Наименование производителя: ZXMS6005DT8

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.13 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: SM8

Аналог (замена) для ZXMS6005DT8

- подборⓘ MOSFET транзистора по параметрам

 

ZXMS6005DT8 даташит

 ..1. Size:247K  diodes
zxms6005dt8.pdfpdf_icon

ZXMS6005DT8

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 0.1. Size:348K  diodes
zxms6005dt8q.pdfpdf_icon

ZXMS6005DT8

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

 5.1. Size:242K  diodes
zxms6005dgq.pdfpdf_icon

ZXMS6005DT8

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 5.2. Size:556K  diodes
zxms6005dg.pdfpdf_icon

ZXMS6005DT8

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-te

Другие MOSFET... ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , TK10A60D , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 .

History: IPAN60R650CE | CM20N50F | KHB5D0N50F2 | AGM60P85D | TMD5N50G | 2SK1151L | 2SK3264-01MR

 

 

 

 

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