ZXMS6005DT8
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMS6005DT8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.13
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: SM8
ZXMS6005DT8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMS6005DT8
Datasheet (PDF)
..1. Size:247K diodes
zxms6005dt8.pdf
A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove
0.1. Size:348K diodes
zxms6005dt8q.pdf
ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut
5.1. Size:242K diodes
zxms6005dgq.pdf
ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect
5.2. Size:556K diodes
zxms6005dg.pdf
A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te
5.3. Size:524K diodes
zxms6005dgq-13.pdf
ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart
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