MTB50P03HDL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTB50P03HDL
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 340 ns
Cossⓘ - Выходная емкость: 1550 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: D2PAK
Аналог (замена) для MTB50P03HDL
MTB50P03HDL Datasheet (PDF)
mtb50p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a
mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf
MTB50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and
mtb50p03hdlrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a
mtb50p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a
mtb50n06vrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about
mtb50n06el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo
mtb50n06vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou
mtb50n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about
mtb50n06elrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo
mtb50n06vlrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918