MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

MTB50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou