MTB50P03HDL - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06V/D Designer's Data Sheet MTB50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.028 OHM area product about

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06EL/D Advance Information MTB50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistors TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL Logic Level TMOS (L2TMOS ) 50 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.028 OHM These TMOS Power FETs are designed fo

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06VL/D Designer's Data Sheet MTB50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.032 OHM area product abou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06V/D Designer's Data Sheet MTB50N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.028 OHM area product about

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06EL/D Advance Information MTB50N06EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistors TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL Logic Level TMOS (L2TMOS ) 50 AMPERES 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.028 OHM These TMOS Power FETs are designed fo

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06VL/D Designer's Data Sheet MTB50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.032 OHM area product abou