All MOSFET. MTB50P03HDL Datasheet

 

MTB50P03HDL Datasheet and Replacement


   Type Designator: MTB50P03HDL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 340 nS
   Cossⓘ - Output Capacitance: 1550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: D2PAK
 

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MTB50P03HDL Datasheet (PDF)

 ..1. Size:187K  motorola
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MTB50P03HDL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 ..2. Size:90K  onsemi
mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDL

MTB50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and

 0.1. Size:182K  motorola
mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

 4.1. Size:258K  motorola
mtb50p03hd.pdf pdf_icon

MTB50P03HDL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50P03HDL/DDesigner's Data SheetMTB50P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETTMOS POWER FETD2PAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate50 AMPERES30 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.025 OHMthan a

Datasheet: MMBFJ309L , MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E , IRFB31N20D , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 .

History: CPH6347 | IRL3103L | IXFK240N15T2 | BSF030NE2LQ

Keywords - MTB50P03HDL MOSFET datasheet

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