MTB50P03HDL MOSFET. Datasheet pdf. Equivalent

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MTB50P03HDL Datasheet (PDF)

1.1. mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf Size:90K _upd-mosfet

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http://onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and

1.2. mtb50p03hdl.pdf Size:187K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's? Data Sheet MTB50P03HDL HDTMOS E-FET.? Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P–Channel Enhancement–Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than any existing

 1.3. mtb50p03hdlrev2.pdf Size:182K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's? Data Sheet MTB50P03HDL HDTMOS E-FET.? Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P–Channel Enhancement–Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than any existing

1.4. mtb50p03hd.pdf Size:258K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's? Data Sheet MTB50P03HDL HDTMOS E-FET.? Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P–Channel Enhancement–Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than any existing

 1.5. mtb50p03hdl.pdf Size:90K _onsemi

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http://onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM

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