MTP2P50E. Аналоги и основные параметры
Наименование производителя: MTP2P50E
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 100 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
Тип корпуса: TO220AB
Аналог (замена) для MTP2P50E
- подборⓘ MOSFET транзистора по параметрам
MTP2P50E даташит
mtp2p50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra
mtp2p50erev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2P50E/D Designer's Data Sheet MTP2P50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra
mtp2p50eg.pdf
MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc
mtp2p50e-d.pdf
MTP2P50E Power MOSFET 2 Amps, 500 Volts P-Channel TO-220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed http //onsemi.com to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-sourc
Другие MOSFET... MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , P60NF06 , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 .
History: IRFSL23N20DPBF | IRFSL31N20DP | IRFH8324PBF
History: IRFSL23N20DPBF | IRFSL31N20DP | IRFH8324PBF
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASA60R150E | ASA60R090EFDA | ASA60R090EFD | ASA50R130E | ADW120N080G2 | ADQ120N080G2 | ADG120N080G2 | AS6004 | 2N7002EY | AS2310A | 2N7002KM | 2N7002KH | AON5802 | AOSS62934 | AOSN21319C | AONS66966
Popular searches
aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent | bu801 | c8550 transistor datasheet | mj21194 transistor datasheet




