Справочник MOSFET. NTD4805N

 

NTD4805N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD4805N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 20.3 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: DPAK
     - подбор MOSFET транзистора по параметрам

 

NTD4805N Datasheet (PDF)

 ..1. Size:116K  onsemi
ntd4805n nvd4805n.pdfpdf_icon

NTD4805N

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q

 0.1. Size:294K  onsemi
ntd4805n-d.pdfpdf_icon

NTD4805N

NTD4805NPower MOSFET30 V, 88 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.0 m @10V CPU Power Delivery30 V 88 A7.4 m @4.5V DC--DC Co

 0.2. Size:153K  onsemi
ntd4805n-1g ntd4805nt4g.pdfpdf_icon

NTD4805N

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant5.0 mW @

 8.1. Size:150K  onsemi
ntd4809n-1g.pdfpdf_icon

NTD4805N

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

Другие MOSFET... NTD2955 , NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , NTD40N03R , NTD4302 , NTD4804N , IRF530 , NTD4806N , NTD4808N , NTD4809N , NTD4810N , NTD4813N , NTD4813NH , NTD4815N , NTD4855N .

History: GSM4510S | WMJ38N60C2 | NTD5862N | SIR808DP | AO6804A | RJK1525DPE | IRFBA22N50A

 

 
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