NTD4805N Datasheet and Replacement
   Type Designator: NTD4805N
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 79
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
 V   
|Id| ⓘ - Maximum Drain Current: 95
 A   
Tj ⓘ - Maximum Junction Temperature: 175
 °C   
tr ⓘ - Rise Time: 20.3
 nS   
Cossⓘ - 
Output Capacitance: 610
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005
 Ohm
		   Package: 
DPAK
				
				  
				 
   - 
MOSFET ⓘ Cross-Reference Search
 
		
NTD4805N Datasheet (PDF)
 ..1.  Size:116K  onsemi
 ntd4805n nvd4805n.pdf 
 
						  
 
NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q
 0.1.  Size:294K  onsemi
 ntd4805n-d.pdf 
 
						  
 
NTD4805NPower MOSFET30 V, 88 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.0 m @10V CPU Power Delivery30 V 88 A7.4 m @4.5V DC--DC Co
 0.2.  Size:153K  onsemi
 ntd4805n-1g ntd4805nt4g.pdf 
 
						  
 
NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant5.0 mW @
 8.1.  Size:150K  onsemi
 ntd4809n-1g.pdf 
 
						  
 
NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv
 8.2.  Size:124K  onsemi
 ntd4806n.pdf 
 
						  
 
NTD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications6.0 mW @ 10 V CPU Power Delivery30 V 76 A9.4 mW @ 4.5 V DC-DC Con
 8.3.  Size:117K  onsemi
 ntd4809n nvd4809n.pdf 
 
						  
 
NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A
 8.4.  Size:330K  onsemi
 ntd4809nhg.pdf 
 
						  
 
NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC
 8.5.  Size:320K  onsemi
 ntd4808n-d.pdf 
 
						  
 
NTD4808NPower MOSFET30 V, 63 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications8.0 m @10V CPU Power Delivery30 V63 A12.4 m @4.5 V DC--DC
 8.6.  Size:153K  onsemi
 ntd4806n-1g.pdf 
 
						  
 
NTD4806N, NVD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.0 mW @
 8.7.  Size:110K  onsemi
 ntd4809na-1g.pdf 
 
						  
 
NTD4809NAAdvance InformationPower MOSFET25 V, 58 A, Single N- Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices9.0 mW @ 10 V25 V 58 AApplications14 mW @ 4.5 V CPU Power D
 8.8.  Size:270K  onsemi
 ntd4809n-d.pdf 
 
						  
 
NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co
 8.9.  Size:157K  onsemi
 ntd4804n-1g.pdf 
 
						  
 
NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 
 8.10.  Size:153K  onsemi
 ntd4804na-1g.pdf 
 
						  
 
NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power
 8.11.  Size:153K  onsemi
 ntd4809nh-1g.pdf 
 
						  
 
NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m
 8.12.  Size:89K  onsemi
 ntd4804n nvd4804n.pdf 
 
						  
 
NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A
 8.13.  Size:275K  onsemi
 ntd4804n-d.pdf 
 
						  
 
NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC 
Datasheet: NTD2955
, NTD3055-094
, NTD3055-150
, NTD3055L104
, NTD3055L170
, NTD40N03R
, NTD4302
, NTD4804N
, STP80NF70
, NTD4806N
, NTD4808N
, NTD4809N
, NTD4810N
, NTD4813N
, NTD4813NH
, NTD4815N
, NTD4855N
. 
History: 2N7275R
 | NTD3055L104
Keywords - NTD4805N MOSFET datasheet
 NTD4805N cross reference
 NTD4805N equivalent finder
 NTD4805N lookup
 NTD4805N substitution
 NTD4805N replacement
 
 
