NTJD4001N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTJD4001N
Маркировка: TE*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.272 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 0.25 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 0.9 nC
Время нарастания (tr): 23 ns
Выходная емкость (Cd): 19 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
Тип корпуса: SC88 SOT363
NTJD4001N Datasheet (PDF)
ntjd4001n nvtjd4001n.pdf
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NTJD4001N, NVTJD4001NMOSFET Dual, N-Channel,Small Signal, SC-8830 V, 250 mAFeatureswww.onsemi.com Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate AEC Q101 Qualified - NVTJD4001N 1.0 W @ 4.0 V250 mA30 V These Devices are Pb-Free and are RoHS Compliant1.5 W @ 2.5 VApplicatio
ntjd4001n.pdf
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NTJD4001NSmall Signal MOSFET30 V, 250 mA, Dual N-Channel, SC-88Features Low Gate Charge for Fast Switchinghttp://onsemi.com Small Footprint - 30% Smaller than TSOP-6V(BR)DSS RDS(on) TYP ID Max ESD Protected Gate1.0 W @ 4.0 V Pb-Free Package is Available250 mA30 V1.5 W @ 2.5 VApplications Low Side Load SwitchSOT-363 Li-Ion Battery Supplied Devi
ntjd4158c.pdf
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NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V
ntjd4105c.pdf
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NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performancehttp://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available0.29 W @ 4.5 VN-Ch
ntjd4152p nvjd4152p.pdf
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NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an
ntjd4152p.pdf
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NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V
ntjd4105ct1g.pdf
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NTJD4105CSmall Signal MOSFET20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88Features Complementary N and P Channel Devicehttp://onsemi.com Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1V(BR)DSS RDS(on) TYP ID MAX SC-88 Package for Small Footprint (2 x 2 mm)0.29 W @ 4.5 VN-Ch 20 V 0.63 A Pb-Free Package M
ntjd4158c nvjd4158c.pdf
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NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont
ntjd4401n nvjd4401n.pdf
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NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant
ntjd4401n.pdf
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NTJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)http://onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available0.29 W @ 4.5 VApplications 20 V 0.63 A0.36 W @ 2.5 V Load Power Switching Li-Ion
ntjd4152pt1g.pdf
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NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V Load/Power Mana
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