2SK962-01 - Даташиты. Аналоги. Основные параметры

FUJI POWER MOSFET 2SK961 N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maximum ratings and characteristic

Power F-MOS FETs 2SK963 2SK963 Silicon N-Channel Power F-MOS Unit mm Features 7.0 0.3 3.5 0.2 3.0 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) High-speed switching tf = 45ns(typ) No secondary breakdown 1.1 0.1 0.85 0.1 Applications 0.75 0.1 0.4 0.1 DC-DC converter Non-contact relay Solenoid drive 2.3 0.2 4.6 0.4 Motor drive 1 2 3 1 Gate

isc N-Channel MOSFET Transistor 2SK960-MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 5.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK961 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoi