2SK979
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK979
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tjⓘ - Максимальная температура канала: 150
°C
tonⓘ - Время включения: 160
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7
Ohm
Тип корпуса:
TO247
- подбор MOSFET транзистора по параметрам
2SK979
Datasheet (PDF)
9.1. Size:46K 1
2sk973l 2sk973s.pdf 

2SK973 L , 2SK973 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4
9.2. Size:44K 1
2sk972.pdf 

2SK972Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum R
9.3. Size:43K 1
2sk971.pdf 

2SK971Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum Ra
9.4. Size:46K 1
2sk974l 2sk974s.pdf 

2SK974 L , 2SK974 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4
9.6. Size:109K renesas
r07ds0434ej 2sk975.pdf 

Preliminary Datasheet R07DS0434EJ03002SK975 (Previous: REJ03G0905-0200)Rev.3.00Silicon N Channel MOS FET Jun 07, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid
9.7. Size:75K renesas
2sk975.pdf 

2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous: ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES
9.8. Size:286K inchange semiconductor
2sk973s.pdf 

isc N-Channel MOSFET Transistor 2SK973SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
9.9. Size:287K inchange semiconductor
2sk972.pdf 

isc N-Channel MOSFET Transistor 2SK972FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.10. Size:288K inchange semiconductor
2sk971.pdf 

isc N-Channel MOSFET Transistor 2SK971FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.11. Size:354K inchange semiconductor
2sk973l.pdf 

isc N-Channel MOSFET Transistor 2SK973LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
9.12. Size:205K inchange semiconductor
2sk974l.pdf 

isc N-Channel MOSFET Transistor 2SK974LFEATURESWith TO-251(IPAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra
9.13. Size:200K inchange semiconductor
2sk974s.pdf 

isc N-Channel MOSFET Transistor 2SK974SFEATURESWith TO-252 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
Другие MOSFET... 2SK970
, 2SK971
, 2SK972
, 2SK973L
, 2SK973S
, 2SK974L
, 2SK974S
, 2SK975
, IRFZ44N
, 2SK981
, 2SK981A
, 2SK985
, 2SK987
, 2SK988
, 2SK989
, 2SK990
, 2SK991
.
History: KP731V
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